VN808CM价格
参考价格:¥30.9979
型号:VN808CM-32-E 品牌:STMicroelectronics 备注:这里有VN808CM多少钱,2026年最近7天走势,今日出价,今日竞价,VN808CM批发/采购报价,VN808CM行情走势销售排行榜,VN808CM报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN808CM | LOW THRESHOLD OCTAL HIGH SIDE DRIVER Description The VN808CM is a monolithic device designed with STMicroelectronics VIPower M0-3 Technology, and is intended for driving any kind of load with one side connected to ground. General Features ■ CMOS COMPATIBLE INPUT ■ JUNCTION OVER-TEMPERATURE PROTECTION ■ CASE OVER-TEMPERATURE PROT | STMICROELECTRONICS 意法半导体 | ||
VN808CM | IC DRIVER OCTAL HISIDE 36PWRSOIC | STMICROELECTRONICS 意法半导体 | ||
Octal channel high side driver Description The VN808CM-32-E is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply. Features ■ CMOS compatible input ■ Junction over-temperature pro | STMICROELECTRONICS 意法半导体 | |||
Octal channel high side driver Description The VN808CM-E is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply. Features ■ CMOS compatible input ■ Junction overtemperature protecti | STMICROELECTRONICS 意法半导体 | |||
八通道高侧驱动器 The VN808CM-E and VN808CM-32-E are monolithic devices designed with STMicroelectronics VIPower M0-3 technology, intended to drive any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply.\n\n Active current limitation combined with thermal shutdown and autom • CMOS compatible input \n• Junction overtemperature protection \n• Case overtemperature protection for thermal independence of the channels \n• Current limitation \n• Shorted load protection \n• Undervoltage shutdown \n• Protection against loss of ground \n• Very low standby current \n• Compliance ; | STMICROELECTRONICS 意法半导体 | |||
Octal channel high side driver Description The VN808CM-32-E is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply. Features ■ CMOS compatible input ■ Junction over-temperature pro | STMICROELECTRONICS 意法半导体 | |||
Octal channel high side driver Description The VN808CM-E is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply. Features ■ CMOS compatible input ■ Junction overtemperature protecti | STMICROELECTRONICS 意法半导体 | |||
Octal channel high side driver 文件:460.71 Kbytes Page:21 Pages | STMICROELECTRONICS 意法半导体 | |||
门驱动器 Industrial & ASIC | STMICROELECTRONICS 意法半导体 | |||
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O | PANJIT 強茂 | |||
Single Element Detector The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap | PERKINELMER | |||
Single Element Detector The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap | PERKINELMER | |||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184) | NEC 瑞萨 | |||
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184) | NEC 瑞萨 |
VN808CM产品属性
- 类型
描述
- 输出数:
8
- 比率 - 输入:
输出
- 输出配置:
高端
- 输出类型:
N 通道
- 接口:
开/关
- 电压 - 负载:
10.5 V ~ 45 V
- 电压 - 电源(Vcc/Vdd):
不需要
- 电流 - 输出(最大值):
700mA
- 导通电阻(典型值):
160 毫欧(最大)
- 输入类型:
非反相
- 特性:
自动重启,状态标志
- 故障保护:
限流(固定),超温
- 工作温度:
-40°C ~ 125°C (TJ)
- 封装/外壳:
36-BSSOP(0.433\,11.00mm 宽)裸露焊盘
- 供应商器件封装:
PowerSO-36
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
25+ |
PowerSO-36 |
12421 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST/意法半导体 |
22+ |
PowerSO-36 |
6005 |
原装正品现货 可开增值税发票 |
|||
STMicroelectronics |
21+ |
POWERSO-36 |
310 |
保证原装正品 深圳现货 |
|||
STM |
21+ |
PowerSO-36 EPD |
600 |
||||
ST(意法) |
25+ |
PowerSO-36 |
12421 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST/意法原装正品 |
26+ |
PowerSO-36 |
3600 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
ST/意法 |
2152+ |
PWRSO36 |
8000 |
原装正品现货假一罚十 |
|||
ST/意法 |
2025+ |
PowerSO-36EPD |
1200 |
原装进口价格优 请找坤融电子! |
|||
ST/意法 |
23+ |
NA |
6520 |
原盘原标 公司现货/支持实单 |
|||
ST(意法) |
24+ |
5579 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
VN808CM规格书下载地址
VN808CM参数引脚图相关
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DdatasheetPDF页码索引
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