LOW THRESHOLD OCTAL HIGH SIDE DRIVER

Description The VN808CM is a monolithic device designed with STMicroelectronics VIPower M0-3 Technology, and is intended for driving any kind of load with one side connected to ground. General Features ■ CMOS COMPATIBLE INPUT ■ JUNCTION OVER-TEMPERATURE PROTECTION ■ CASE OVER-TEMPERATURE PROT

IC DRIVER OCTAL HISIDE 36PWRSOIC

Octal channel high side driver

Description The VN808CM-32-E is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply. Features ■ CMOS compatible input ■ Junction over-temperature pro

Octal channel high side driver

Description The VN808CM-E is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply. Features ■ CMOS compatible input ■ Junction overtemperature protecti

八通道高侧驱动器

The VN808CM-E and VN808CM-32-E are monolithic devices designed with STMicroelectronics VIPower M0-3 technology, intended to drive any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply.\n\n Active current limitation combined with thermal shutdown and autom • CMOS compatible input \n• Junction overtemperature protection \n• Case overtemperature protection for thermal independence of the channels \n• Current limitation \n• Shorted load protection \n• Undervoltage shutdown \n• Protection against loss of ground \n• Very low standby current \n• Compliance ;

Octal channel high side driver

Description The VN808CM-32-E is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply. Features ■ CMOS compatible input ■ Junction over-temperature pro

Octal channel high side driver

Description The VN808CM-E is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. It can be driven by using a 3.3 V logic supply. Features ■ CMOS compatible input ■ Junction overtemperature protecti

Octal channel high side driver

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门驱动器 Industrial & ASIC

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)