TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

N-Channel Enhancement-Mode

Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor

Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

N-Channel Enhancement-Mode Vertical DMOS FET

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N-Channel Enhancement-Mode Vertical DMOS FET

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Low-Cost, 820 nm Miniature Link Fiber Optic Components with ST, SMA, SC, and FC Ports

Features  RoHS compliant  Low-cost transmitters and receivers  Choice of ST, SMA, SC, or FC ports  820 nm wavelength technology  Signal rates up to 160 MBaud  Link distances up to several kilometers  Compatible with 50/125 μm, 62.5/125 μm, 100/140 μm, and 200 μm Plastic-Clad Silica (

Thick Panel Snap Bushings

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Snap Bushings

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CAPTIVE PANEL SCREWS

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Video Filter

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