Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

N-Channel Enhancement-Mode

Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

N-Channel Enhancement-Mode Vertical DMOS FET

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N-Channel Enhancement-Mode Vertical DMOS FET

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Low-Cost, 820 nm Miniature Link Fiber Optic Components with ST, SMA, SC, and FC Ports

Features  RoHS compliant  Low-cost transmitters and receivers  Choice of ST, SMA, SC, or FC ports  820 nm wavelength technology  Signal rates up to 160 MBaud  Link distances up to several kilometers  Compatible with 50/125 μm, 62.5/125 μm, 100/140 μm, and 200 μm Plastic-Clad Silica (

CAPTIVE PANEL SCREWS

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Video Filter

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Thick Panel Snap Bushings

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Snap Bushings

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