TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

N-Channel Enhancement-Mode

Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor

Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

N-Channel Enhancement-Mode Vertical DMOS FET

文件：559.47 Kbytes Page：4 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：776.77 Kbytes Page：12 Pages

2.4 GHz INTEGRATED UPMIXER GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in Industrial, Scientific, Medical (ISM) frequency band applications, the MRFIC2406 is an active GaAs upmixer in a low–cost SOIC 16–lead, surface mount package. The integrated circuit has internal active Baluns and requires minimal off-chip matching. In STANDBY mode, the

Monolithic Triple 9 ns CRT Driver

文件：143.33 Kbytes Page：6 Pages

SINGLE COMPARATOR

文件：155.22 Kbytes Page：5 Pages

SINGLE COMPARATOR

文件：155.22 Kbytes Page：5 Pages