Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

N-Channel 240-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 3.5 Ω ● Secondary Breakdown Free: 260 V ● Low Power/Voltage Driven ● Low Input and Output Leakage ● Excellent Thermal Stability BENEFITS ● Low Offset Voltage ● Full-Voltage Operation ● Easily Driven Without Buffer ● Low Error Voltage ● No High-Temperature “

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

N-Channel Enhancement-Mode

Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Applications ❏ Motor

Small Signal MOSFET 200 mAmps, 240 Volts

Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 200 mAMPS 240 VOLTS RDS(on) = 6 Ω

N-Channel Enhancement-Mode Vertical DMOS FET

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N-Channel Enhancement-Mode Vertical DMOS FET

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2.4 GHz INTEGRATED UPMIXER GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in Industrial, Scientific, Medical (ISM) frequency band applications, the MRFIC2406 is an active GaAs upmixer in a low–cost SOIC 16–lead, surface mount package. The integrated circuit has internal active Baluns and requires minimal off-chip matching. In STANDBY mode, the

Monolithic Triple 9 ns CRT Driver

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SINGLE COMPARATOR

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SINGLE COMPARATOR

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