VN21价格

参考价格:¥1.2091

型号:VN2106N3-G 品牌:Microchip 备注:这里有VN21多少钱,2025年最近7天走势,今日出价,今日竞价,VN21批发/采购报价,VN21行情走势销售排行榜,VN21报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN21

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:221.2 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

VN21

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:189.46 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

VN21

封装/外壳:Pentawatt-5(垂直,弯曲和错列引线) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VN21

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:221.2 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:189.46 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:189.46 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode Vertical DMOS FETs

Microchip

微芯科技

MOSFET, N-Channel Enhancement-Mode, 100V, 4.0 Ohm

Microchip

微芯科技

封装/外壳:Pentawatt-5(垂直,弯曲和错列引线) 包装:卷带(TR) 描述:IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

HIGH SIDE SMART POWER SOLID STATE RELAY

文件:85.81 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

VN21产品属性

  • 类型

    描述

  • 型号

    VN21

  • 功能描述

    电源开关 IC - 配电 High Side for SSR

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-11-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUPERTEX
24+
NA/
4250
原厂直销,现货供应,账期支持!
Super
07+
TO-92
107
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SUPERTEX
25+
SOT-23
46296
SUPERTEX全新特价VN2110K1即刻询购立享优惠#长期有货
MICROCHIP/微芯
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
SUPERTEX
23+
SOT-23
50000
原装正品 支持实单
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
MICROCHIP/微芯
22+
TO-92-3
12245
现货,原厂原装假一罚十!
MICROCHIP/美国微芯
23+
TO-92(TO-92-3)
12700
买原装认准中赛美
MICROCHIP/美国微芯
24+
TO-92(TO-92-3)
30000
原装正品公司现货,假一赔十!
ST
25+
TO220-5V
2987
只售原装自家现货!诚信经营!欢迎来电!

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