VN21价格

参考价格:¥1.2091

型号:VN2106N3-G 品牌:Microchip 备注:这里有VN21多少钱,2025年最近7天走势,今日出价,今日竞价,VN21批发/采购报价,VN21行情走势销售排行榜,VN21报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN21

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:221.2 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

VN21

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:189.46 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

VN21

封装/外壳:Pentawatt-5(垂直,弯曲和错列引线) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VN21

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:221.2 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:189.46 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:189.46 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode Vertical DMOS FETs

Microchip

微芯科技

MOSFET, N-Channel Enhancement-Mode, 100V, 4.0 Ohm

Microchip

微芯科技

封装/外壳:Pentawatt-5(垂直,弯曲和错列引线) 包装:卷带(TR) 描述:IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

HIGH SIDE SMART POWER SOLID STATE RELAY

文件:85.81 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

VN21产品属性

  • 类型

    描述

  • 型号

    VN21

  • 功能描述

    电源开关 IC - 配电 High Side for SSR

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-10-4 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCHIP(美国微芯)
2447
TO-92(TO-92-3)
105000
1000个/袋一级代理专营品牌!原装正品,优势现货,长
Microchip(微芯)
25+
TO-92(TO-92-3)
500000
源自原厂成本,高价回收工厂呆滞
STMicroelectronics
24+
5-PENTAWATT
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
MICROCHIP/微芯
24+
SOT23
9000
进口原装现货支持实单欢迎来电
SUPERTEX
25+
SOT-23
46296
SUPERTEX全新特价VN2110K1即刻询购立享优惠#长期有货
Supertex
25+
SOT-23
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
Super
07+
TO-92
107
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICROCHIP/美国微芯
2023+
TO-92(TO-92-3)
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供
ST
24+
SMD10
5000
MICROCHIP/美国微芯
25
TO-92(TO-92-3)
6000
原装正品

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