N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology Thisi enhancement-mode (normally-off) transistori utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input imped

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology Thisi enhancement-mode (normally-off) transistori utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input imped

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

KNOB

文件：130.94 Kbytes Page：1 Pages

Replace XX with 02, 04, 06, 08 or 12 for number of poles

文件：230.55 Kbytes Page：3 Pages

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages

Broadband Resistive Power Divider

文件：521.62 Kbytes Page：1 Pages