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VN10K价格
参考价格：￥1.4716
型号：VN10KN3-G 品牌：Microchip 备注：这里有VN10K多少钱，2025年最近7天走势，今日出价，今日竞价，VN10K批发/采购报价，VN10K行情走势销售排行榜，VN10K报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN10K | N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX |   | |
VN10K | N-CHANNEL ENHANCEMENT MODE MOSFET 文件：228.35 Kbytes Page：3 Pages | TTELEC | | |
VN10K | N-Channel Enhancement Mode MOSFET | TTELEC | | |
VN10K | MOSFET, N-Channel Enhancement-Mode, 60V, 5.0 Ohm | Microchip 微芯科技 | | |
VN10K | N-CHANNEL ENHANCEMENT MODE MOSFET 文件：229.3 Kbytes Page：3 Pages | SEME-LAB | | |
N-Channel Enhancement-Mode MOS Transistors Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli | Temic | | ||
N-Channel Enhancement-Mode MOS Transistors Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli | Temic | | ||
N-Channel Enhancement Mode [Siliconix] MOSPOWER APPLICATIONS ■ Switching Regulators ■ Converters ■ Motor Drivers | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-Channel Enhancement Mode MOSPOWER MOSPOWER APPLICATIONS ■ Switching Regulators ■ Converters ■ Motor Drivers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs [TOPAZ SEMICONDUCTOR] N-Channel Enhancement-Mode Vertical DMOS FETs | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs [TOPAZ SEMICONDUCTOR] N-Channel Enhancement-Mode Vertical DMOS FETs | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs N-Channel Enhancement-Mode Vertical DMOS FETs | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs N-Channel Enhancement-Mode Vertical DMOS FETs | SUTEX | | ||
场效应管(MOSFET) | ETC 知名厂家 | ETC | | |
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：196.91 Kbytes Page：3 Pages | SEME-LAB | | ||
N-Channel 60-V (D-S) MOSFETs with Zener Gate 文件：48.21 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 60-V (D-S) MOSFETs with Zener Gate 文件：63.78 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：20.14 Kbytes Page：2 Pages | SEME-LAB | |
VN10K产品属性
- 类型
描述
- 型号
VN10K
- 制造商
TT Electronics/ Semelab
- 功能描述
MOSFETHI-RELN CH60V0.17ATO-18
- 制造商
TT Electronics/ Semelab
- 功能描述
MOSFET,HI-REL,N CH,60V,0.17A,TO-18
- 制造商
SEMELAB
- 功能描述
MOSFET,HI-REL,N CH,60V,0.17A,TO-18; Transistor Polarity
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILICONIX |
24+ |
SOT-23 |
47186 |
郑重承诺只做原装进口现货 |
|||
VISHAY |
2023+ |
SOT-23 |
50000 |
原装现货 |
|||
MICROCHIP/微芯 |
2406+ |
TO-92 |
33000 |
诚信经营!进口原装!量大价优! |
|||
VISHAY |
23+ |
CAN3 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY |
22+ |
CAN |
8900 |
全新正品现货 有挂就有现货 |
|||
MICROCHIP(美国微芯) |
2021+ |
TO-92-3 |
499 |
||||
Microchip |
2511 |
TO-92-3 |
5904 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
VISHAY |
23+ |
TO-92 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY/威世 |
25+ |
SOT-23 |
20300 |
VISHAY/威世原装特价VN10KT-T1-E3即刻询购立享优惠#长期有货 |
VN10K规格书下载地址
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