N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

MOSFET, N-Channel Enhancement-Mode, 80V, 4.0 Ohm

N-Channel 80- and 90-V (D-S) MOSFETs

features
Low On-Resistance: 3.6

Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage benefits
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage appli

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

N-Channel 80- and 90-V (D-S) MOSFETs

features
Low On-Resistance: 3.6

Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage benefits
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage appli

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

N-Channel 80- and 90-V (D-S) MOSFETs

features
Low On-Resistance: 3.6

Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage benefits
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage appli

Enhancement-Mode MOSFET Transistors

N-Channel 80- and 90-V (D-S) MOSFETs

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N-Channel 80- and 90-V (D-S) MOSFETs

文件：52.49 Kbytes Page：4 Pages

CMOS ANALOG-TO-DIGITAL CONVERTERS WITH 8-CHANNEL MULTIPLEXERS

文件：345.87 Kbytes Page：6 Pages

8-Bit uP Compatible A/D Converters with 8-Channel Multiplexer

文件：348 Kbytes Page：14 Pages

8-Bit uP Compatible A/D Converters with 8-Channel Multiplexer

文件：394.86 Kbytes Page：16 Pages

8-Bit Compatible A/D Converters with 8-Channel Multiplexer

文件：533.66 Kbytes Page：19 Pages

8-Bit uP Compatible A/D Converters with 8-Channel Multiplexer

文件：264.52 Kbytes Page：14 Pages