N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

MOSFET, N-Channel Enhancement-Mode, 80V, 4.0 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown\nLow power drive requirement\nEase of paralleling\nLow CISS and fast switching speeds\nExcellent thermal stability\nIntegral source-drain diode\nHigh input impedance and high gain;

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

N-Channel 80- and 90-V (D-S) MOSFETs

features
Low On-Resistance: 3.6

Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage benefits
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage appli

N-Channel 80- and 90-V (D-S) MOSFETs

features
Low On-Resistance: 3.6

Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage benefits
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage appli

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

N-Channel 80- and 90-V (D-S) MOSFETs

features
Low On-Resistance: 3.6

Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage benefits
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage appli

Enhancement-Mode MOSFET Transistors

N-Channel 80- and 90-V (D-S) MOSFETs

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N-Channel 80- and 90-V (D-S) MOSFETs

文件：52.49 Kbytes Page：4 Pages

8-Bit uP Compatible A/D Converters with 8-Channel Multiplexer

文件：264.52 Kbytes Page：14 Pages

8-Bit uP Compatible A/D Converters with 8-Channel Multiplexer

文件：264.52 Kbytes Page：14 Pages

8-Bit uP Compatible A/D Converters with 8-Channel Multiplexer

文件：264.52 Kbytes Page：14 Pages

8-Bit uP Compatible A/D Converters with 8-Channel Multiplexer

文件：264.52 Kbytes Page：14 Pages

8-Bit uP Compatible A/D Converters with 8-Channel Multiplexer

文件：264.52 Kbytes Page：14 Pages