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VN05价格

参考价格：￥4.4908

型号：VN0550N3-G 品牌：Supertex 备注：这里有VN05多少钱，2026年最近7天走势，今日出价，今日竞价，VN05批发/采购报价，VN05行情走势销售排行榜，VN05报价。

型号	功能描述	生产厂家企业	LOGO
VN05	HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN050H	HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN050H011Y	HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN050H012Y	HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN0540	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN0540N3	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN0540ND	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN0545	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN0545ND	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN0550	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN0550	N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VN0550 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi	SUTEX	SUTEX
VN0550	MOSFET, N-Channel Enhancement-Mode, 500V, 60 Ohm This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;	MICROCHIP 微芯科技	MICROCHIP
VN0550N3	N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VN0550 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi	SUTEX	SUTEX
VN0550N3	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN0550ND	N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN05H	HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN05HSP	HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05HSP is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V l	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN05N	HIGH SIDE SMART POWER SOLID STATE RELAY Description The VN05N is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from over temperature and short circuit. The input control is 5V logic level compa	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN05N011Y	HIGH SIDE SMART POWER SOLID STATE RELAY Description The VN05N is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from over temperature and short circuit. The input control is 5V logic level compa	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN05N012Y	HIGH SIDE SMART POWER SOLID STATE RELAY Description The VN05N is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from over temperature and short circuit. The input control is 5V logic level compa	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN05N-E	High side smart power solid state relay Description The VN05N is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from over temperature and short circuit. The input control is 5V logic level compa	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN05NSP	HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05NSP is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level c	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN0550	N-Channel Enhancement-Mode Vertical DMOS FET 文件：448.94 Kbytes Page：14 Pages	MICROCHIP 微芯科技	MICROCHIP
VN0550_07	N-Channel Enhancement-Mode Vertical DMOS FETs 文件：534.25 Kbytes Page：5 Pages	SUTEX	SUTEX
VN0550N3	N-Channel Enhancement-Mode Vertical DMOS FETs 文件：534.25 Kbytes Page：5 Pages	SUTEX	SUTEX
VN0550N3	N-Channel Enhancement-Mode Vertical DMOS FETs	MICROCHIP 微芯科技	MICROCHIP
VN0550N3G	N-Channel Enhancement-Mode Vertical DMOS FET 文件：448.94 Kbytes Page：14 Pages	MICROCHIP 微芯科技	MICROCHIP
VN0550N3-G	N-Channel Enhancement-Mode Vertical DMOS FETs 文件：534.25 Kbytes Page：5 Pages	SUTEX	SUTEX
VN05H	HIGH SIDE SMART POWER SOLID STATE RELAY	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN05N	封装/外壳：Pentawatt-5（垂直，弯曲和错列引线）包装：管件描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC）配电开关，负载驱动器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
VN05N-E	封装/外壳：Pentawatt-5（垂直，弯曲和错列引线）包装：卷带（TR）描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC）配电开关，负载驱动器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

VN05产品属性

类型
描述
BVdss min (V)：
500
Rds (on) max (Ohms)：
60
CISSmax (pF)：
55
Vgs(th) max (V)：
4.0
Packages：
3\\TO-92

VN05供应商更多...

更新时间：2026-5-25 11:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	VN05N-E	STMicroelectronics	25+	N/A	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市高捷芯城科技有限公司	VN0550N3-G-P013	Microchip Technology / Atmel	25+	TO-92-3	6843	样件支持,可原厂排单订货!	询价
深圳市骏创达科技有限公司	VN05A1500000G	TE/泰科	2608+	/	209858	一级代理，原装现货	询价
上海磐岳电子有限公司	VN05H		2023+		5800	进口原装,现货热卖	询价
上海凌岳电子科技有限公司（上海涵恩科技）	VN05NSP	ST	2023+		3000	进口原装现货	询价
贸泽芯城（深圳）电子科技有限公司	VN05NSP	ST/意法	23+	SO10	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市卓越微芯电子有限公司	VN05H	ST	25+	TO220	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
现代芯城（深圳）科技有限公司	VN054		26+	N/A	60000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市安富世纪电子有限公司	VN05N	ST	23+	TO220-5	8000	只做原装现货	询价
深圳市勤思达科技有限公司	VN05H	STM	10+	TO220	7800	全新原装正品,现货销售	询价

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找IC，尽在114IC

VN05价格

VN05产品属性

VN05供应商更多...

VN05芯片相关品牌

VN05规格书下载地址

VN05参数引脚图相关

VN05数据表相关新闻

VMI高压光耦合器OC150G

VN330SPTR-E

VN330SPTR-E 电桥驱动器 汽车电脑版芯片 贴片HSOP-10

VN330SPTR-E 门驱动器 QUAD HIGH SIDE

VMMK-2203-TR1G

VMMK-1225-BLKG 射频结栅场效应晶体管(RF JFET)晶体管

DdatasheetPDF页码索引

VN330SPTR-E 电桥驱动器汽车电脑版芯片贴片HSOP-10