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VN05价格
参考价格：￥4.4908
型号：VN0550N3-G 品牌：Supertex 备注：这里有VN05多少钱，2025年最近7天走势，今日出价，今日竞价，VN05批发/采购报价，VN05行情走势销售排行榜，VN05报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN05 | HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log | STMICROELECTRONICS 意法半导体 |   | |
HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log | STMICROELECTRONICS 意法半导体 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VN0550 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VN0550 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V log | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05HSP is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V l | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY Description The VN05N is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from over temperature and short circuit. The input control is 5V logic level compa | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY Description The VN05N is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from over temperature and short circuit. The input control is 5V logic level compa | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY Description The VN05N is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from over temperature and short circuit. The input control is 5V logic level compa | STMICROELECTRONICS 意法半导体 | | ||
High side smart power solid state relay Description The VN05N is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shutdown protects the chip from over temperature and short circuit. The input control is 5V logic level compa | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY DESCRIPTION The VN05NSP is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level c | STMICROELECTRONICS 意法半导体 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：448.94 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
MOSFET, N-Channel Enhancement-Mode, 500V, 60 Ohm | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：534.25 Kbytes Page：5 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：534.25 Kbytes Page：5 Pages | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：448.94 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：534.25 Kbytes Page：5 Pages | SUTEX | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：Pentawatt-5（垂直，弯曲和错列引线） 包装：管件 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：Pentawatt-5（垂直，弯曲和错列引线） 包装：卷带（TR） 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | |
VN05产品属性
- 类型
描述
- 型号
VN05
- 制造商
Amphenol Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
22+ |
TO-92 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
24+ |
NA/ |
3650 |
原厂直销,现货供应,账期支持! |
|||
MICROCHIP/微芯 |
24+ |
TO-92-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
SUPERTEXINC |
18+ |
TO-92 |
743 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
SOP10 |
16900 |
正规渠道,只有原装! |
|||
ST |
20+ |
原装 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
TE/泰科 |
2450+ |
5PIN |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
22+ |
SOP10 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
VN05规格书下载地址
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