HiPerFET MOSFET Module

HiPerFET™ MOSFET Module N-Channel Enhancement Mode Features ● International standard package ● Direct Copper Bonded Al2O3 ceramic base plate ● Isolation voltage 3600 V~ ● Low RDS(on) HDMOSTM process ● Low package inductance for high speed switching ● Kelvin Source contact for easy drive A

Single Switch MOSFET Modules

·Vdss: 100V - 500V. Id(25): 41A - 1245A \n·Extremely Low Rds(on): 1.35 mOhms\n·Fast intrinsic diode. dv/dt ruggedness\n·low inductive current path\n·Kelvin source terminals for easy drive\n·2500 V rms Isolation with ceramic base plate;