Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：136.04 Kbytes Page：5 Pages

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30A 45V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to I

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：136.04 Kbytes Page：5 Pages