型号 功能描述 生产厂家 企业 LOGO 操作
VIT2080S

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

VIT2080S

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世威世科技公司

VIT2080S

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:150.59 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:148.41 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

肖特基二极管与整流器 20A 80V Single TrenchMOS

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:148.41 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 20A 80V TO-262AA 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

整流器 20A,80V,TRENCH SKY RECT.

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 20A 80V TO-262AA 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

B - Indoor keyed

文件:224.32 Kbytes Page:5 Pages

LEMO

雷莫

B - Indoor keyed

文件:173.32 Kbytes Page:4 Pages

LEMO

雷莫

B - Indoor keyed

文件:220.53 Kbytes Page:5 Pages

LEMO

雷莫

B - Indoor keyed

文件:174.27 Kbytes Page:4 Pages

LEMO

雷莫

B - Indoor keyed

文件:167.35 Kbytes Page:4 Pages

LEMO

雷莫

VIT2080S产品属性

  • 类型

    描述

  • 型号

    VIT2080S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Trench MOS Barrier Schottky Rectifier

更新时间:2025-11-21 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原厂渠道,现货配单
Vishay General Semiconductor -
25+
TO-262AA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
VISHAY/威世
2023+
SMD
8635
一级代理优势现货,全新正品直营店
VISHAY/威世
23+
TO262
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY
25+
TO-262
3675
就找我吧!--邀您体验愉快问购元件!

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