型号 功能描述 生产厂家 企业 LOGO 操作
VIT1080C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

VIT1080C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

VishayVishay Siliconix

威世威世科技公司

VIT1080C

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A

VishayVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VishayVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free a

VishayVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A

VishayVishay Siliconix

威世威世科技公司

肖特基二极管与整流器 10A 80V Dual TrenchMOS

VishayVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件:148.81 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件:148.81 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 10A 80V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:管件 描述:DIODE SCHOTTKY 10A 80V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Inst, 24 Pr #2022 Str BC, PVC Ins E1, IS/OS, Blk PVC Jkt, 300V PLTC ITC CMG

Product Description UL Instrumentation, 24 Pair 20+22AWG (7x28) Bare Copper, PVC Insulation E1 Color Code, Individual & Overall Beldfoil® Shield, Black PVC Outer Jacket, PLTC ITC CMG AWM 2464 SUN RES

BELDEN

百通

Original Strain Relief Bushings

文件:129.02 Kbytes Page:1 Pages

Heyco

300V Power-Limited Tray Cables ??Overview

文件:1.05773 Mbytes Page:22 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

10.0A SUPER BARRIER RECTIFIER

文件:277.17 Kbytes Page:3 Pages

ZSELEC

淄博圣诺

Scalable HA Server Series

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NEC

瑞萨

VIT1080C产品属性

  • 类型

    描述

  • 型号

    VIT1080C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual Trench MOS Barrier Schottky Rectifier

更新时间:2025-11-20 18:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原厂渠道,现货配单
VISHAY/威世
23+
TO262
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
Vishay General Semiconductor -
25+
TO-262-3 长引线 I?Pak TO-26
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
24+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
VISHAY
25+
TO-262
3675
就找我吧!--邀您体验愉快问购元件!

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