Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：DIODE SCHOTTKY 10A 45V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

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肖特基二极管与整流器 10A 45V Dual Trench for Solar APPs Only

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