位置：首页 > IC中文资料第9591页 > VI40100C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VI40100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 |   | |
VI40100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
VI40100C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：138.83 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
VI40100C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：131.02 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：155.39 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：160.65 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40A 100V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 40A 100V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas | STMICROELECTRONICS 意法半导体 | | ||
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas | STMICROELECTRONICS 意法半导体 | | ||
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas | STMICROELECTRONICS 意法半导体 | | ||
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas | STMICROELECTRONICS 意法半导体 | | ||
1M x 40 Bit Dynamic Random Access Memory Module 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications | MOTOROLA 摩托罗拉 | |
VI40100C产品属性
- 类型
描述
- 型号
VI40100C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+23+ |
TO-262 |
15952 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
23+ |
TO-262 |
4950 |
实实在在-只做原装正品 |
|||
VISHAY/威世 |
2403+ |
TO-262-3 |
6489 |
原装现货热卖!十年芯路!坚持! |
|||
VISHAY/威世 |
25+ |
TO-262 |
12000 |
原装正品真实现货杜绝虚假 |
|||
Vishay/GeneralSemiconduc |
24+ |
TO-262AA |
992 |
||||
VISHAY |
22+ |
TO-262 |
20000 |
公司只做原装 品质保证 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
2450+ |
TO-262 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY/威世 |
25+ |
TO-262 |
32360 |
VISHAY/威世全新特价VI40100C-E3/4W即刻询购立享优惠#长期有货 |
|||
VISHAY |
23+ |
TO-262 |
8560 |
受权代理!全新原装现货特价热卖! |
VI40100C规格书下载地址
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