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VI30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

Ultra Low VF = 0.56 V at IF = 5 A   FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum,

VISHAYVishay Siliconix

威世威世科技公司

VI30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

VISHAYVishay Siliconix

威世威世科技公司

VI30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

VI30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.63 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:159.93 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:148.99 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.6 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

Ultra Low VF = 0.56 V at IF = 5 A   FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum,

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

Ultra Low VF = 0.56 V at IF = 5 A   FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum,

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:169.29 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

肖特基二极管与整流器 30 Amp 150 Volt Dual TrenchMOS

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.6 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:169.29 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 30A 150V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.63 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 30A 150V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

整流器 30A,150V,TRENCH SKY RECT.

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:130.63 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. FEATURES AND BENEFITS ■ HIGH JUNCTION TEMPERATURE CAPABILITY ■ GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP ■ LOW LEAKAGE CURRENT ■ INSULATED PACKAGE: TO-220FPAB

STMICROELECTRONICS

意法半导体

VI30150C产品属性

  • 类型

    描述

  • 型号

    VI30150C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

更新时间:2026-5-19 17:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY/威世
25+
TO220
15000
全新原装现货,价格优势
VISHAY/威世
22+
TO-262
12245
现货,原厂原装假一罚十!
VISHAY
25+
TO262
20000
原厂原装,价格优势
VISHAY
25+23+
TO-262
15506
绝对原装正品全新进口深圳现货
VISHAY原装
22+
TO-262
20000
公司只做原装 品质保证
VISHAY
24+
TO262
7000
恒科翔业代理原装现货支持商城下单
VISHAYHONGKONGLIMITED
24+
2410
Vishay(威世)
23+
N/A
11800
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原厂渠道,现货配单

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