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VI30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

VISHAYVishay Siliconix

威世威世科技公司

VI30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VISHAYVishay Siliconix

威世威世科技公司

VI30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:124.52 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:154.91 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VI30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:158.13 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

VISHAYVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VISHAYVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2

VISHAYVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

文件:154.91 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 30A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:卷带(TR) 描述:DIODE SCHOTTKY 30A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

4-BIT SINGLE CHIP MICROCOMPUTERS

OUTLINE OF CHARACTERISTICS The GMS300 series is a family of 4-bit, single chip CMOS microcomputer. Since it can form a system by one chip, it contributes to cost reduction and higher efficiency in system. Characteristics • Program memory : 512 bytes for GMS30004/012

HYNIX

海力士

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr

INTERSIL

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr

FAIRCHILD

仙童半导体

30A, 1200V Hyperfast Diode

The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of s

FAIRCHILD

仙童半导体

30A, 1200V Ultrafast Diode

The RURP30120 is an ultrafast diode with soft recovery characteristic (trr Features • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .

INTERSIL

VI30120SG产品属性

  • 类型

    描述

  • 型号

    VI30120SG

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

更新时间:2026-8-1 19:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
12+
TO262
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
25+
原厂封装
32500
原装正品,欢迎询价
VISHAY
25+23+
TO-262
15506
绝对原装正品全新进口深圳现货
VISHAYHONGKONGLIMITED
24+
2410
Vishay(威世)
23+
N/A
11800
VISHAY原装
22+
TO-262
20000
公司只做原装 品质保证
Vishay Semiconductor Diodes Di
22+
TO262AA
9000
原厂渠道,现货配单
VISHAY
23+
TO-262
8560
受权代理!全新原装现货特价热卖!
VISHAY/威世
2447
TO-262
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
VISHAY
23+
TO262
3500
原厂原装正品

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