位置：首页 > IC中文资料第9876页 > VI30120S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VI30120S | High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 |   | |
VI30120S | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | |
VI30120S | High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
VI30120S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VI30120S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.419 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
Low forward voltage drop, low power losses High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 2 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：726.92 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：731.92 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：165.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.9 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.43 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：158.13 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：124.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：DIODE SCHOTTKY 120V 30A TO262AA 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：154.91 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 30A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.419 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：130.419 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
PRODUCT SPECIFICATION Cable/Wire stripperss | JOKARI | | ||
Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● Common Cathode Center Tap ● 300 Amperes/45 Volts ● 125°C Junction Temperature ● Reverse Energy Tested ● VRRM 20 - 45 Volts ● ROHS Compliant | Microsemi 美高森美 | | ||
PRODUCT SPECIFICATION 文件：395.81 Kbytes Page：6 Pages | JOKARI | | ||
BNC FEEDTHROUGH CONNECTORS 文件：341.09 Kbytes Page：2 Pages | CLIFF | | ||
0.3 Inch Single Digit SMD Display 文件：240.28 Kbytes Page：7 Pages | CHINASEMI | |
VI30120S产品属性
- 类型
描述
- 型号
VI30120S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
23+ |
TO-262AA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
QFP |
178 |
|||||
Vishay General Semiconductor - |
25+ |
TO-262AA |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NS/国半 |
23+ |
MSOP8 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
VISHAY |
18+ |
TO-262 |
41200 |
原装正品,现货特价 |
|||
VISHAY |
25+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
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