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型号 功能描述 生产厂家 企业 LOGO 操作
VHT1M160

105째C ALUMINUM ELECTROLYTIC

文件:17.87 Kbytes Page:2 Pages

NTE

VHT1M160

牛角型电解电容

NTE

Glass Passivated Junction Silicon Zener Diode

Features ♦ Low profile package ♦ Built-in strain relief ♦ Glass passivated junction ♦ Low inductance ♦ Typical IR less than 5uA above 11V ♦ High temperature soldering guaranteed: 260℃ / 10 seconds at terminals ♦ Plastic package has Underwriters Laboratory Flammability Cl

TSC

台湾半导体

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt FEATURES • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Typical IR less than 5.0 A above 11V • High temperature soldering : 260°C /10 seconds at terminals • Plastic package has Underwriters Laboratory

TRSYS

Transys Electronics

Glass Passivated Junction Silicon Zener Diode

文件:1.18579 Mbytes Page:5 Pages

TSC

台湾半导体

NH Fuse Links

文件:427.99 Kbytes Page:2 Pages

LITTELFUSE

力特

VHT1M160产品属性

  • 类型

    描述

  • 型号

    VHT1M160

  • 制造商

    NTE

  • 制造商全称

    NTE Electronics

  • 功能描述

    105∑C ALUMINUM ELECTROLYTIC

更新时间:2026-5-18 16:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
24+
TSOP-14P
1000
26+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
TOKO
23+
50000
全新原装正品现货,支持订货

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