NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability FEATURES: • Common Emitter-Class-C • PG = 10 dB at 30 W/150 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

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NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

文件：17.95 Kbytes Page：1 Pages

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The B25-28 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. FEATURES: • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions • Omnigold™ Metallization System

Single output 15W ~ 1500W

Features ● marking (Low Voltage Directive) ● 74 models, 15 ~ 1500W ● Wide input voltage range EWS15, 25, 50: 85 ~ 265VAC universal input EWS100, 150, 300, 600: 100/200VAC auto-selectable EWS1500: 100/200VAC user-selectable ● Wide output voltage range: 520 (EWS300, 600, 1500) ●

12VA Dual Primary 115V-230V, 50/60HZ Transformers

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(1.27 mm) .050 PITCH • DISCRETE WIRE ASSEMBLY/COMPONENTS

文件：658.17 Kbytes Page：2 Pages

(1.27 mm) .050 PITCH • DISCRETE WIRE ASSEMBLY/COMPONENTS

文件：658.17 Kbytes Page：2 Pages