封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 80V 分立半导体产品 二极管 - 整流器 - 单

Trench MOS Barrier Schottky Rectifier

文件：148.44 Kbytes Page：5 Pages

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

Trench MOS Schottky technology

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

Trench MOS Barrier Schottky Rectifier

文件：150.87 Kbytes Page：5 Pages

Trench MOS Barrier Schottky Rectifier

文件：160.94 Kbytes Page：6 Pages