Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：81.72 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application

Trench MOS Barrier Schottky Rectifier

文件：83.3 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：79.98 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier

文件：81.51 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：81.72 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

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封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 45V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

Trench MOS Barrier Schottky Rectifier

文件：83.3 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：81.72 Kbytes Page：4 Pages

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara