Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum    peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per    JESD 22-B106 (for TO-220AB, ITO-2

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

Trench MOS Barrier Schottky Rectifier

文件：75.94 Kbytes Page：4 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 10A 80V ITO-220AB 分立半导体产品 二极管 - 整流器 - 单

Trench MOS Barrier Schottky Rectifier

文件：148.38 Kbytes Page：5 Pages

肖特基二极管与整流器 10A,80V,Trench

Trench MOS Barrier Schottky Rectifier

文件：148.38 Kbytes Page：5 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 10A 80V ITO-220AB 分立半导体产品 二极管 - 整流器 - 单

整流器 10A,80V,TRENCH SKY RECT.

Trench MOS Barrier Schottky Rectifier

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