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型号 功能描述 生产厂家 企业 LOGO 操作
VFT1080S

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VISHAYVishay Siliconix

威世威世科技公司

VFT1080S

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

VFT1080S

Trench MOS Barrier Schottky Rectifier

文件:78.94 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum    peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per    JESD 22-B106 (for TO-220AB, ITO-2

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:75.94 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:148.38 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE SCHOTTKY 10A 80V ITO-220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

肖特基二极管与整流器 10A,80V,Trench

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:148.38 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE SCHOTTKY 10A 80V ITO-220AB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

整流器 10A,80V,TRENCH SKY RECT.

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:78.94 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MOTOROLA

摩托罗拉

Integrated Circuit TV Video Processor

Features: • For Reverse AGC • Sufficient Gain and Quieting Sensitivity • Stable Gain Over the Wide Band • Small Wave Distortion with AGC

NTE

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge,

PANJIT

強茂

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

VOLTAGE 20 to 150 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge,

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For thorough hole applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction

PANJIT

強茂

VFT1080S产品属性

  • 类型

    描述

  • 型号

    VFT1080S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Trench MOS Barrier Schottky Rectifier

更新时间:2026-8-1 13:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay Semiconductor Diodes Di
22+
ITO220AB
9000
原厂渠道,现货配单
VISHAY/威世
25+
TO220F-3
90000
全新原装现货
VISHAY/威世
24+
TO-220F
47186
郑重承诺只做原装进口现货
VISHAY
23+
TO-220F
50000
全新原装正品现货,支持订货
VISHAY
25+23+
TO-220F
19717
绝对原装正品全新进口深圳现货
22+
TO-220F
20000
只做原装
VISHAY/威世
25+
TO-220F
12000
原装正品真实现货杜绝虚假
VISHAY/威世
23+
ITO-220AB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
TECCOR/LITT
23+
TO-220
69820
终端可以免费供样,支持BOM配单!

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