Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Trench MOS Schottky technology Gen 2\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：166.71 Kbytes Page：6 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

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封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTKY 200V 15A ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：166.71 Kbytes Page：6 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：166.71 Kbytes Page：6 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：155.79 Kbytes Page：5 Pages

Body-mount Antenna ??4G LTE Cellular

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