Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.526 V at IF = 5A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Dual High Voltage Trench MOS Barrier Schottky Rectifier

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封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTTKY 200V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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30 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200 Volts

[LTO-DMS Semiconductor Corporation] Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency

PHOTO TRIAC COUPLER?

PHOTO TRIAC COUPLER APPLICATIONS ● OFFICE MACHINERY ● HOUSEHOLD APPLIANCES ● TRIAC DRIVER ● SOLID STATE RELAY ● TELECOMMUNICATIONS ● FACSIMILE ● LAMP & RELAY DRIVE CIRCUIT

30A SBR Super Barrier Rectifier

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30A SBR짰 SUPER BARRIER RECTIFIER

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30A SBR Super Barrier Rectifier

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