位置：首页 > IC中文资料第11712页 > VF20120S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VF20120S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge | VishayVishay Siliconix 威世科技 |   | |
VF20120S | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技 | | |
VF20120S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A | VishayVishay Siliconix 威世科技 | | |
VF20120S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 2 | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Haloge | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Ultra Low VF= 0.54 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：75.51 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：150.35 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 120V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
肖特基二极管与整流器 20 Amp 120 Volt Single TrenchMOS | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.33 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.09 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.37 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.37 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：75.41 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：160.88 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：162.45 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.37 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | ||
1200 V αSiC Silicon Carbide Schottky Barrier Diode Features • Proprietary αSiC Schottky Barrier Diode technology • Negligible reverse recovery current • Maximum operating junction temperature of 175°C • Improved switching losses vs. Si bipolar diodes • Positive temperature coefficient for ease of paralleling Applications Renewable Industr | AOSMD 万国半导体 | | ||
LOW VF SCHOTTKY RECTIFIER 文件：52.63 Kbytes Page：2 Pages | PANJIT 強茂 | | ||
LOW VF SCHOTTKY RECTIFIER 文件：71.1 Kbytes Page：4 Pages | PANJIT 強茂 | | ||
Ultra low forward voltage drop, low power loss 文件：98.01 Kbytes Page：4 Pages | PANJIT 強茂 | | ||
Ultra low forward voltage drop, low power loss 文件：67.95 Kbytes Page：4 Pages | PANJIT 強茂 | |
VF20120S产品属性
- 类型
描述
- 型号
VF20120S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY原装 |
25+23+ |
TO-220F |
23890 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
24+ |
TO-220F |
5000 |
全新原装正品,现货销售 |
|||
Vishay/GeneralSemiconduc |
24+ |
ITO-220AB |
697 |
||||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
24+ |
TO220F |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY/威世 |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
VISHAY |
0731+ |
TO220F |
99 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2022+ |
ITO-220A |
12888 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
24+ |
TO-220F |
60000 |
全新原装现货 |
|||
VISHAY |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
VF20120S规格书下载地址
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VF20120S数据表相关新闻
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DdatasheetPDF页码索引
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