Silicon NPN Phototransistor

DESCRIPTION VEMT2000X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. FEATURES • Package type: surface mount • Package form

Silicon NPN Phototransistor

DESCRIPTION VEMT2000X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. FEATURES • Package type: surface mount • Package form

Silicon NPN Phototransistor

DESCRIPTION VEMT2000X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters FEATURES • Package type: surface mount • Package form:

Silicon NPN Phototransistor

Package type: surface mount\nPackage form: GW, RGW\nDimensions (L x W x H in mm): 2.3 x 2.3 x 2.8;

封装/外壳：2-SMD，Z形弯曲 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PHOTOTRANSISTOR 790 TO 970 NM 传感器，变送器 光学传感器 - 光电晶体管

Silicon NPN Phototransistor

文件：138.53 Kbytes Page：8 Pages

Silicon NPN Phototransistor

DESCRIPTION VEMT2000X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. FEATURES • Package type: surface mount • Package form

Silicon NPN Phototransistor

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH

DESCRIPTION VSMB2000X01 series are infrared, 940 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: GW, RGW • Dimens

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH

DESCRIPTION VSMB2000X01 series are infrared, 940 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions

High Speed Infrared Emitting Diodes

文件：160.45 Kbytes Page：8 Pages

High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH

文件：145.67 Kbytes Page：8 Pages