Dual N-Channel Power MOSFET 60V, 3A, 80mΩ

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. • Low On-Resistance\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• Low-Profile Package\n• Board Space Saving\n• ESD Diode-Protected Gate\n• ESD Resistance\n• RoHS Compliance\n• Environmental Consideration\n• 4V drive;

Power MOSFET

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N-Channel Power MOSFET 60V, 3A, 80m廓, Dual VEC8

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General-Purpose Switching Device Applications

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N-Channel Power MOSFET 60V, 3A, 80m廓, Dual VEC8

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Power MOSFET

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：INTEGRATED CIRCUIT 分立半导体产品 晶体管 - FET，MOSFET - 单个

Power MOSFET

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MICROWAVE POWER GaAs FET?

Silicon Complementary Transistors Digital w/2 Built-In Bias 10k Resistors (Surface Mount)

Features: • Built–In Bias Resistors • Small SOT–23 Surface Mount Package Applications: • Switching Circuits • Inverters • Interface Circuits • Driver

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Monolithic Triple 5.5 ns CRT Driver

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Monolithic Triple 5.5 ns CRT Driver

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