Silicon PIN Photodiode

DESCRIPTION VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. FEATURES • Package

Silicon PIN Photodiode

DESCRIPTION VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. FEATURES • Package

封装/外壳：2-SMD，鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PHOTODIODE 750 TO 1050 NM 传感器，变送器 光学传感器 - 光电二极管

Silicon PIN Photodiode

文件：164 Kbytes Page：8 Pages

Silicon PIN Photodiode

Silicon PIN Photodiode

文件：188.56 Kbytes Page：8 Pages

Silicon PIN Photodiode

DESCRIPTION VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. FEATURES • Package

Silicon PIN Photodiode

DESCRIPTION VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. FEATURES • Package

Silicon PIN Photodiode

DESCRIPTION VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. FEATURES • Package

Silicon PIN Photodiode

DESCRIPTION VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. FEATURES • Package

Silicon PIN Photodiode

Silicon PIN Photodiode

文件：188.56 Kbytes Page：8 Pages

Silicon PIN Photodiode

文件：188.56 Kbytes Page：8 Pages

封装/外壳：2-SMD，Z形弯曲 包装：散装 描述：PHOTODIODE 750 TO 1050 NM 传感器，变送器 光学传感器 - 光电二极管

Silicon PIN Photodiode

文件：164 Kbytes Page：8 Pages

Silicon PIN Photodiode

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

104/204 In-Line Threaded Diaphragm Seal

FEATURES „ 316L stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging; ideal for viscous media, slurries and emulsions „ Large 21/2˝ diaphragm compatib

Smooth, high torque, roller ratchet handle

文件：254.3 Kbytes Page：3 Pages