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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBM1201K_V01 | N-Channel 200 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch | VBSEMI 微碧半导体 |   | |
N-Channel 200 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch | VBSEMI 微碧半导体 | |
更新时间：2025-10-16 15:01:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi(台湾微碧) |
2447 |
TO-220AB |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VBSEMI |
24+ |
con |
35960 |
查现货到京北通宇商城 |
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DdatasheetPDF页码索引
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