位置:首页 > IC中文资料第88页 > VB927T-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
6.0 W 824 to 849 MHz RF LINEAR POWER AMPLIFIERS The RF Line UHF Linear Power Amplifiers Designed specifically for the United States digital 3.0 W, mobile radio. The MHW927A/B are capable of wide power range control, operate from a 12.5 V supply and require 1.0 mW of RF input power. • MHW927A Operates from a 9.5 Volt Bias Supply (VB | MOTOROLA 摩托罗拉 | |||
6.0 W 824 to 849 MHz RF LINEAR POWER AMPLIFIERS The RF Line UHF Linear Power Amplifiers Designed specifically for the United States digital 3.0 W, mobile radio. The MHW927A/B are capable of wide power range control, operate from a 12.5 V supply and require 1.0 mW of RF input power. • MHW927A Operates from a 9.5 Volt Bias Supply (VB | MOTOROLA 摩托罗拉 | |||
Integrated Circuit Differential Video Amplifier Description: The NTE927 is a two–stage, differential input, differential output, wide–band video amplifier. The use of internal series–shunt feedback gives wide band bandwidth with low phase distortion and high gain stability. Emitter–follower outputs provide a high current drive, low impedance c | NTE | |||
Integrated Circuit Differential Video Amplifier Description: The NTE927D and NTE927SM are two–stage, differential input, differential output, wide–band video amplifiers. The use of internal series–shunt feedback gives wide band bandwidth with low phase distortion and high gain stability. Emitter–follower outputs provide a high current drive, l | NTE | |||
Integrated Circuit Differential Video Amplifier Description: The NTE927D and NTE927SM are two–stage, differential input, differential output, wide–band video amplifiers. The use of internal series–shunt feedback gives wide band bandwidth with low phase distortion and high gain stability. Emitter–follower outputs provide a high current drive, l | NTE |
VB927T-E产品属性
- 类型
描述
- 型号
VB927T-E
- 功能描述
MOSFET PWM MOSFET SWITCH
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
VB927T-E芯片相关品牌
VB927T-E规格书下载地址
VB927T-E参数引脚图相关
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VB927T-E数据表相关新闻
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二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感 器、逻辑芯片、电源芯片、放大器、
2019-3-12
DdatasheetPDF页码索引
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