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VB30100S价格

参考价格：￥4.8971

型号：VB30100S-E3/4W 品牌：Vishay 备注：这里有VB30100S多少钱，2025年最近7天走势，今日出价，今日竞价，VB30100S批发/采购报价，VB30100S行情走势销售排行榜，VB30100S报价。

型号	功能描述	生产厂家企业	LOGO
VB30100S	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：139.41 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.13 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3	Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter	ISC 无锡固电	ISC
VB30100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3SLASH8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-E3	High efficiency operation FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-E3	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-E3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-E3SLASH8W	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-M3	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?9	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-M3_V01	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?9	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-M3	High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?9	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-M3	Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter	ISC 无锡固电	ISC
VB30100S-M3_V01	High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?9	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3	High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3/4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3/4W	High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3/8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3/8W	High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3/8W	封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：DIODE SCHOTTKY 100V 30A TO263AB 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
VB30100S-E3-4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3-8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3SLASH4W	High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3SLASH4W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3SLASH8W	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-E3SLASH8W	High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.46 Kbytes Page：6 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-E3	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-E3	High Voltage Trench MOS Barrier Schottky Rectifier 文件：152.57 Kbytes Page：5 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-M3	High efficiency operation 文件：90.13 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-M3	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100SG-M3_15	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：80.16 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-M3	Low forward voltage drop, low power losses 文件：88.69 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-M3	High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A	VishayVishay Siliconix 威世威世科技公司	Vishay
VB30100S-M3/4W	封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件描述：DIODE SCHOTTKY 30A 100V TO-263AB 分立半导体产品二极管 - 整流器 - 单	ETC 知名厂家	ETC
VB30100S-M3_15	High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.5 Kbytes Page：4 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
30100	PRODUCT SPECIFICATION Cable/Wire stripperss	JOKARI	JOKARI
AMLDL-30100Z	Up to 1000mA \| LED Driver Up to 1000mA \| LED Driver FEATURES: • Step Down DC/DC LED driver • Constant current output • Wide (4:1) input voltage range • High efficiency up to 95 • Operating Temperature range -40ºC to +85ºC • Open and Short LED Protection • PWM/Digital and Analog Voltage dimming	AIMTEC	AIMTEC
AMLDLW-30100Z	Up to 1000mA \| LED Driver Up to 1000mA \| LED Driver FEATURES: • Wire Connections • Constant current output • Wide (4:1) input voltage range • High efficiency up to 95 • Step Down DC/DC LED driver • Operating Temperature range -40ºC to +85ºC • Open and Short LED Protection • PWM/Digital	AIMTEC	AIMTEC
AMLDL-30100Z	Up to 1000mA \| LED Driver 文件：440.91 Kbytes Page：14 Pages	AIMTEC	AIMTEC
AMLDL-30100Z	Up to 1000mA \| LED Driver 文件：353.85 Kbytes Page：14 Pages	AIMTEC	AIMTEC

VB30100S产品属性

类型
描述
型号
VB30100S
制造商
VISHAY
制造商全称
Vishay Siliconix
功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

VB30100S供应商更多...

更新时间：2025-12-27 8:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市诺美思科技有限公司	VB30100S	VISHAY		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳瞄钧科技有限公司	VB30100S	Vishay(威世)	24+	N/A	11800	可配单提供样品	询价
深圳市华康联电子科技有限公司	VB30100S	Vishay(威世)	23+	N/A	11800		询价
深圳市得捷芯城科技有限公司	VB30100S-E3/8W	VISHAY(威世)	24+	TO-263AB	5627	百分百原装正品,可原型号开票	询价
深圳市金芯世纪电子有限公司	VB30100SG-E3	VISHAY/威世	22+	TO-263	100000	代理渠道/只做原装/可含税	询价
中天科工半导体（深圳）有限公司	VB30100S-E3/8W	VISHAY/威世	25+	TO-263AB	32360	VISHAY/威世全新特价VB30100S-E3/8W即刻询购立享优惠#长期有货	询价
深圳市明嘉莱科技有限公司	VB30100S-E3/8W	VISHAY/威世	25+	NA	880000	明嘉莱只做原装正品现货	询价
贸泽芯城（深圳）电子科技有限公司	VB30100SG-M3	VISHAY/威世	23+	TO-263	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市高捷芯城科技有限公司	VB30100S-E3/8W	VISHAY(威世)	24+	TO-263AB	1471	特价优势库存质量保证稳定供货	询价
深圳市一线半导体有限公司	VB30100S-E3/8W	Vishay/GeneralSemiconduc	24+	TO-263	7500		询价

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VB30100S价格

VB30100S产品属性

VB30100S供应商更多...

VB30100S芯片相关品牌

VB30100S规格书下载地址

VB30100S参数引脚图相关

VB30100S数据表相关新闻

VBPW34VR

VAWQ6-Q48-D15H

VBE5415

VBE2104N

VAS1260

V962PBC-33LP

DdatasheetPDF页码索引