Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.33 V at IF = 10 A

分立 Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO263AC 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 45V SMPD 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

SCHOTTKY BARRIER RECTIFIER

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction * Low power loss,high efficiency * High current capability, low forward voltage drop * Guardring for overvoltage protection * For use in low voltage,

LED Head light for Automobile

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