Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5.0 A

Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：115.89 Kbytes Page：5 Pages

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5.0 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5.0 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：115.89 Kbytes Page：5 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR） 描述：40A 45V SMPD TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：40A 45V SMPD TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：115.89 Kbytes Page：5 Pages

40A DUAL SCHOTTKY BARRIER RECTIFIER

Features  Schottky Barrier Chip  Guard Ring for Transient Protection  Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Current Capability  Epoxy Meets UL 94V-0 Classification  Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

Switchmode Dual Schottky Barrier Power Rectifiers

文件：152.61 Kbytes Page：2 Pages