Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：98.97 Kbytes Page：5 Pages

Very low profile - typical height of 1.7 mm

文件：109.09 Kbytes Page：5 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR） 描述：DIODE SCHOTTKY 120V 20A TO263AC 分立半导体产品 二极管 - 整流器 - 阵列

肖特基二极管与整流器 40A, 120V, SMPD, TRENCH SKY RECT.

Very low profile - typical height of 1.7 mm

文件：109.09 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.45 V at IF = 5 A

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：管件 描述：DIODE ARRAY SCHOTTKY 120V SMPD 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：98.97 Kbytes Page：5 Pages

POWER MODULES DIODE

Description The B40J../B40C../B40D.. series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.