Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：106.26 Kbytes Page：5 Pages

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：125.45 Kbytes Page：5 Pages

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：99.2 Kbytes Page：6 Pages

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：125.45 Kbytes Page：5 Pages

肖特基二极管与整流器 40A, 100V, SMPD, TRENCH SKY RECT.

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 120V 15A TO263AC 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：99.2 Kbytes Page：6 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：125.45 Kbytes Page：5 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 凸片）变型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 100V SMPD 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：82.54 Kbytes Page：4 Pages

Programmable System Level Integration Prototyping System

Description The Atmel ATDH40M prototyping system allows designers to quickly and economically evaluate Atmel’s family of AT40K/AT40KAL FPGA and AT94K Field Programmable System Level Integrated Circuit (FPSLIC™) devices and Atmel’s AT17 FPGA configuration memory devices. The ATDH40M board connects

Programmable System Level Integration Prototyping System

Description The Atmel ATDH40M prototyping system allows designers to quickly and economically evaluate Atmel’s family of AT40K/AT40KAL FPGA and AT94K Field Programmable System Level Integrated Circuit (FPSLIC™) devices and Atmel’s AT17 FPGA configuration memory devices. The ATDH40M board connects

POWER MODULES DIODE

Description The B40J../B40C../B40D.. series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and