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V40晶体管资料
V405A别名：V405A三极管、V405A晶体管、V405A晶体三极管
V405A生产厂家：
V405A制作材料：Si-PNP
V405A性质：开关管 （SW）
V405A封装形式：
V405A极限工作电压：12V
V405A最大电流允许值：0.1A
V405A最大工作频率：<1MHZ或未知
V405A引脚数：
V405A最大耗散功率：0.3W
V405A放大倍数：β>20
V405A图片代号：NO
V405Avtest：12
V405Ahtest：999900
- V405Aatest：.1
V405Awtest：.3
V405A代换 V405A用什么型号代替：3CG122A,
V40价格
参考价格：￥8.3923
型号：V4006 品牌：VARTA 备注：这里有V40多少钱，2024年最近7天走势，今日出价，今日竞价，V40批发/采购报价，V40行情走势销售排行榜，V40报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V40 | 包装：散装 描述：SWITCH CONTACT BLOCK 6A RED 开关 可配置开关元件 - 触头块，触点块 | TEConnectivityALCOSWITCHSwitchesTE Connectivity ALCOSWITCH Switches TE Connectivity ALCOSWITCH Switches |  |   |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Lowthermalresistance •Solderbathtemperature275°Cmaximum,10s,perJESD 22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) •Lowthermalresistance •Solderbathtemperature275°Cmaximum,10s,perJESD 22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Powerpack MOS Schottky Barrier Rectifier Features ·TrenchMosSchottkyBarrier ·GuardringforovervoltageProtection ·LowForwardVoltageDrop ·LowReverseLeakageCurrent ·HighSurgeCurrentCapability ·PlasticMaterialhasULFlammability Classification94V-O | DAESAN Daesan Electronics Corp. |  | | |
Schottky Barrier Rectifier FEATURES ·Guard-RingforStressProtection ·LowForwardVoltage ·HighOperatingJunctionTemperature ·LowPowerLoss/HighEfficiency ·Highsurgecapability ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable: - | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V40产品属性
- 类型
描述
- 型号
V40
- 功能描述
控制开关 CONTACT BLK NC RED
- RoHS
否
- 制造商
Omron Industrial
- 控制类型
Emergency Stop
- 触点额定值
5 A at 125 VAC
- 触点形式
1 Form B(SPST-NC)
- 执行器
Pushbutton
- 照明
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO-247 |
65400 |
||||
VISHAY/威世 |
22+ |
TO-220 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
VISHAY/威世 |
21+ |
TO-220AB |
60000 |
绝对原装正品现货,假一罚十 |
|||
VISHAY/威世 |
21+ |
TO-220-3 |
26000 |
只做原装,假一罚十 |
|||
VISHAY/威世 |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
VISHAY |
18+ |
TO-220 |
604 |
||||
VISHAY |
20+ |
TO220 |
36500 |
原装现货/放心购买 |
|||
HAR |
2023+ |
DIP8 |
50000 |
原装现货 |
|||
ALLWINNER/全志 |
23+ |
BGA |
5000 |
全志全系列在售,终端可出样品 |
|||
VISHAY |
23+ |
TO247/TO220 |
19567 |
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V40规格书下载地址
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V40数据表相关新闻
V42254-B2235-C963
V42254-B2235-C963
2022-6-16V42254-B2235-C488
V42254-B2235-C488
2022-6-16V42254-B2240-M780
V42254-B2240-M780
2022-6-16V375B5H200BL 电源模块 进口原装现货。
V375B5H200BL 进口原装现货。
2020-12-4V33CH8
https://hch01.114ic.com/
2020-11-13V375A28C600A
V375A28C600A
2019-12-19
DdatasheetPDF页码索引
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