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V3PM6

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: fo

VISHAYVishay Siliconix

威世威世科技公司

V3PM6

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

Low profile package\nTrench MOS Schottky technology\nLow power losses, high efficiency;

VISHAYVishay Siliconix

威世威世科技公司

V3PM6

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:115.69 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: fo

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

Low profile package\nTrench MOS Schottky technology\nLow power losses, high efficiency;

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

• Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

• Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

• Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

• Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:115.69 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:115.69 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:DO-220AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SCHOTTKY RECTIFIER 3A 60V SMP 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:DO-220AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SCHOTTKY RECTIFIER 3A 60V SMP 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:115.69 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:115.69 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE

AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE • Low reverse current • Glass passivated for hermetic sealing • Low forward voltage drop • Avalanche capability • Good thermal shock resistance

SEMTECH

先之科

更新时间:2026-7-29 18:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
2025+
DEFAULT
87460
26+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择

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