封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 30A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Trench MOS Schottky technology

文件：93.41 Kbytes Page：4 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：105.26 Kbytes Page：4 Pages