位置：首页 > IC中文资料 > V30K170HM3/H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V30K170HM3/H | High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier 文件：158.73 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 |   | |
V30K170HM3/H | 封装/外壳：8-PowerTDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：30A, 170V, FLATPAK 5X6 SINGLE TR 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 | VishayVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface-Mount (TMBS짰) Trench MOS Barrier Schottky Rectifier 文件：158.73 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
两年内 |
NA |
102 |
实单价格可谈 |
|||
VISHAY |
22+ |
PowerTDFN-8 |
440 |
只做原装正品 |
|||
Vishay General Semiconductor - |
25+ |
FlatPAK(5x6) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
鑫远鹏 |
25+ |
NA |
5000 |
价优秒回原装现货 |
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V30K170HM3/H规格书下载地址
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DdatasheetPDF页码索引
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