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V12P12价格
参考价格：￥2.2987
型号：V12P12-M3/86A 品牌：Vishay 备注：这里有V12P12多少钱，2026年最近7天走势，今日出价，今日竞价，V12P12批发/采购报价，V12P12行情走势销售排行榜，V12P12报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V12P12 | High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V12P12 | High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 6 A 分立 Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology; | VISHAYVishay Siliconix 威世威世科技公司 | | |
V12P12 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V12P12 | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.58 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.58 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：85.16 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：531.03 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-277，3-PowerDFN 包装：散装 描述：DIODE SCHOTTKY 120V 12A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-277，3-PowerDFN 包装：散装 描述：DIODE SCHOTTKY 120V 12A TO277A 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.58 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.58 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.58 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：90.58 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier 文件：109.94 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival | ZETEX | | ||
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival | ZETEX | | ||
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival | ZETEX | | ||
EUROLINE DC/DC-Converter 文件：90.6 Kbytes Page：2 Pages | RECOM | | ||
1 Watt SIP 7 Single & Dual Output 文件：106.91 Kbytes Page：3 Pages | RECOM | |
V12P12产品属性
- 类型
描述
- 型号
V12P12
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
14+ |
TO277A |
21 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
25+ |
SMPC(TO-277A) |
20000 |
原装 |
|||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VISHAY/威世 |
24+ |
TO-277Q |
39500 |
进口原装现货 支持实单价优 |
|||
25+ |
500000 |
行业低价,代理渠道 |
|||||
VISHAY/威世 |
2450+ |
TO277A |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY/威世 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
VISHAY/威世 |
新年份 |
TO-277A(SMPC) |
33200 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
VISHAY |
25+23+ |
TO277A(SM |
35553 |
绝对原装正品全新进口深圳现货 |
V12P12规格书下载地址
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V12P12数据表相关新闻
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V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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