■ DESCRIPTION

The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

■ FEATURES

* RDS(on) ≤ 143mΩ @ VGS=10V, ID=6.4A

RDS(on) ≤ 156mΩ @ VGS=4.5V, ID=6.4A

* High Switching Speed