DESCRIPTION

The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

FEATURES

* RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A

* RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A

* Advanced trench process technology

* Excellent thermal and electrical capabilities

* High density cell design for ultra low on-resistance