DESCRIPTION

The UTC F75NM60Z is an N-channel enhancement mode

silicon-gate power MOSFET with fast body diode and ESD

Type, designed for high-voltage, high-speed power switching

applications. such as fast switching time, low gate charge, low

on-state resistance and high rugged avalanche characteristics.

FEATURES

* RDS(ON) ≤ 46 mΩ @ VGS=10V, ID=35A

* Fast body diode MOSFET technology

* Low switching losses due to reduced Qrr

* Single Pulse Avalanche Energy Rated

* Fast Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Avalanche energy tested