DESCRIPTION

The UTC F2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

FEATURES

* RDS(ON) = 5Ω@VGS = 10V

* Ultra Low gate charge (typical 16nC)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness