位置:18T10L-TN3-T > 18T10L-TN3-T详情

18T10L-TN3-T中文资料

厂家型号

18T10L-TN3-T

文件大小

163.65Kbytes

页面数量

3

功能描述

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

数据手册

下载地址一下载地址二到原厂下载

生产厂商

UTC

18T10L-TN3-T数据手册规格书PDF详情

DESCRIPTION

The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc.

The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, etc.

FEATURES

* RDS(ON)<0.16Ω @ VGS=10V

* High switching speed

* Low gate charge

更新时间:2025-10-11 16:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INMET
2023+
TNC(M/M)
25
weinschel 衰减器库存大量现货,欢迎电寻
-
23+
NA
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详