Description

The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.

Features

• Ultra-compact

• PWB mounting type package

• High sensing accuracy ( Slit width: 0.3mm )

• Gap between light emitter and detector: 1.2mm

Applications

• Cameras

• Floppy disk drives

• Printer