General Description

These N-channel enhancement mode power mosfets used

advanced trench technology design, provided excellent Rdson

and low gate charge. Which accords with the RoHS standard.

Features

VDS = 68V,ID =88A

RDS(ON),6.3mΩ(Typ) @ VGS =10V

Low On-Resistance

Low gate charge

Fast switching

Low reverse transfer capacitances

100 single pulse avalanche energy test

100 ΔVDS test

Application

Power switching applications

DC-DC converters

UPS power supply