Description

The CHK080A-SRA is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and telecommunication.

The CHK080A-SRA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.

The CHK080A-SRA is available in a ceramic-metal flange power package providing low parasitic and low thermal resistance.

Main Features

■ Wide band capability: up to 3.5GHz

■ Pulsed and CW operating modes

■ High power : > 80W

■ High Efficiency : up to 70

■ DC bias: VDS =50V @ ID_Q =600mA

■ MTTF > 106 hours @ Tj=200°C

■ RoHS Flange Ceramic package