Description

The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications.

This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability.

Main Features

■ 10W output power

■ High gain : > 18dB @ 10GHz

■ High PAE : > 35 @ 10GHz

■ On-chip bias control

■ Linear collector current control

■ High impedance interface for pulse mode

■ Temperature compensated

■ Chip size: 4.74 x 4.36 x 0.1 mm