24.5-26.5GHz High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for

a wide range of applications, from military to commercial communication systems. The

backside of the chip is both RF and DC grounds. This help simplifies the assembly process.

The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is available in chip form.

Main Features

■Performances : 24.5-26.5GHz

■31dBm output power @ 1dB comp.

■18 dB ±1dB gain

■DC power consumption, 800mA @ 6V

■Chip size : 4.01 x 2.52 x 0.05 mm