Description

The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in chip form.

Main Feature

■ Broad band performance 36-44GHz

■ 3dB noise figure

■ 19dB gain, ± 0.5dB gain flatness

■ Low DC power consumption, 45mA

■ 20dBm 3rd order intercept point

■ Chip size : 1.670 x 0.970x 0.1mm